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Showing results 1 to 8 of 8

1
Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

Shin, Jae-Heon; Hwang, Chi-Sun; Cheong, Woo-Seok; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Minki; Yoon, Sung-Min; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.527 - 530, 2009-01

2
Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors

Yoon, Sung-Min; Yang, Shin-Hyuk; Byun, Chun-Won; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Kang, Seung-Youl; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, 2010

3
Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors

Yoon, Sung-Min; Park, Sang-Hee Ko; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.264 - 267, 2010

4
Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer

Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.24, 2009-12

5
Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Yoon, Sung-Min; Park, Sang-Hee Ko; Byun, Chun-Won; Yang, Shin-Hyuk; Hwang, Chi-Sun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.7, pp.727 - 733, 2010

6
Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Gwang-Geun; et al, APPLIED PHYSICS LETTERS, v.96, no.23, 2010-06

7
Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)

Yoon, Sung-Min; Jung, Soon-Won; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun; Park, Sang-Hee Ko; Ishiwara, Hiroshi, ORGANIC ELECTRONICS, v.11, no.11, pp.1746 - 1752, 2010-11

8
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Ishiwara, Hiroshi, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.5, pp.141 - 143, 2010

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