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1
Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD

Lee, Seung Ryul; Ahn, Byung-Tae; Kang, Bo Soo, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.119, no.4, pp.1437 - 1441, 2015-06

2
Epitaxial Growth of CoSi2 on Si Using a CoNx Interlayer Deposited by Reactive Metallorganic Chemical Vapor Deposition

Kim, Sun Il; Lee, Seung Ryul; Park, Jong Ho; Ahn, Byung Tae, Electrochemical and Solid-State Letters, Vol.8, No.11, pp.G324-G326, 2005

3
Improvement in Thermal Stability of Nickel Silicides Using NiNx Films

Kim, Sun Il; Lee, Seung Ryul; Ahn, Kyung Min; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.3, pp.231 - 234, 2010

4
Silicon epitaxial growth on poly-Si film by HWCVD for low-temperature poly-Si TFTs

Lee, Seung Ryul; Ahn, Kyung Min; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.9, pp.778 - 781, 2007

5
Surface morphology control of epitaxial silicon films grown by hot wire chemical vapor deposition using hydrogen dilution

Lee, Seung Ryul; Ahn, Kyung Min; Kang, Seung Mo; Ahn, Byung Tae, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.94, no.3, pp.606 - 611, 2010-03

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