Showing results 1 to 5 of 5
Epitaxial growth of CoSi2 layer on a Si(100) substrate using a CoNx interlayer deposited by reactive sputtering Kim, SI; Lee, SR; Park, JH; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.5, pp.506 - 510, 2006 |
Epitaxial growth of CoSi2 on si using a CoNx interlayer deposited by reactive metallorganic chemical vapor deposition Kim, SI; Lee, SR; Park, JH; Ahn, Byung Tae, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.11, pp.324 - 326, 2005 |
Fabrication of the poly-Si thin film transistor on the mica substrate Lee, SR; Lee, JH; Ahn, Byung Tae, IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference, pp.1182 - 1184, 123, 2006-08-22 |
Grain boundary incorporation of interstitial oxygen in polycrystalline Si film by plasma oxidation and its effect on thin film transistors Kim, BH; Lee, SR; Ahn, KM; Ahn, Byung Tae, ELECTRONIC MATERIALS LETTERS, v.4, no.2, pp.45 - 49, 2008-06 |
Low-temperature growth of N-doped SiO2 layer using inductively-coupled plasma oxidation and its effect on the characteristics of thin film transistors Kim, BH; Lee, SR; Ahn, KM; Kang, SM; Yang, YH; Ahn, BT, 한국재료학회지, v.19, no.1, pp.37 - 43, 2009 |
Discover