Showing results 1 to 6 of 6
Asymmetric distributions of grown-in microdefects in Czochralski silicon Cho, HJ; Sim, BC; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.289, pp.458 - 463, 2006-04 |
Comparative Study of Thermoelectric Properties of Sb2Si2Te6 and Bi2Si2Te6 Jang, Hanhwi; Abbey, Stanley; Frimpong, Brakowaa; Nguyen, Chien Viet; Ziolkowski, Pawel; Oppitz, Gregor; Kim, Moohyun; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.1, pp.1270 - 1279, 2022-01 |
Control of Point Defects in the Cu(In,Ga)Se-2 Film Synthesized at Low Temperature from a Cu/In2Se3 Stacked Precursor Jung, Gwangsun; Kim, Seungtae; Ko, Young Min; Moon, Sun Hong; Choi, Yong Woo; Ahn, Byung Tae, ELECTRONIC MATERIALS LETTERS, v.12, no.4, pp.472 - 478, 2016-07 |
Diffusivity of point defects in the passive film on Fe Ahn, S; Kwon, Hyuk-Sang, JOURNAL OF ELECTROANALYTICAL CHEMISTRY, v.579, pp.311 - 319, 2005-06 |
Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe2-SnSe Thermoelectrics Jang, Hanhwi; Toriyama, Michael Y.; Abbey, Stanley; Frimpong, Brakowaa; Male, James P.; Snyder, G. Jeffrey; Jung, Yeon Sik; et al, ADVANCED MATERIALS, v.34, no.38, 2022-09 |
The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals Cho, HJ; Lee, BY; Lee, JeongYong, JOURNAL OF CRYSTAL GROWTH, v.292, pp.260 - 265, 2006-07 |
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