Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject nonvolatile memory

Showing results 1 to 6 of 6

1
Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films

Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007

2
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications

Jeong, Hu-Young; Kim, Jong-Yun; Kim, Jeong-Won; Hwang, Jin-Ok; Kim, Ji-Eun; Lee, Jeong-Yong; Yoon, Tae-Hyun; et al, NANO LETTERS, v.10, no.11, pp.4381 - 4386, 2010-11

3
Nanomechanical Encoding Method Using Enhanced Thermal Concentration on a Metallic Nanobridge

Lee, Jeong-Oen; Choi, Kwang-Wook; Choi, Seon-Jin; Kang, Min-Ho; Seo, Min-Ho; Kim, Il-Doo; Yu, Kyoungsik; et al, ACS NANO, v.11, no.8, pp.7781 - 7789, 2017-08

4
Nonvolatile memory characteristics of NMOSFET with Ag nanocrystals synthesized via a thermal decomposition process for uniform device distribution

Ryu, Seong-Wan; Bin Mo, Chan; Hong, Soon Hyung; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.145 - 150, 2008-03

5
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor

Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07

6
그래핀 산화물 박막 기반의 저항변화 메모리에서의 금속 전극의 영향 = Effects of metal electrodes on graphene oxide thin film based resistive switching memorylink

김성규; Kim, Sung-Kyu; et al, 한국과학기술원, 2012

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