Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject high mobility

Showing results 1 to 6 of 6

1
(A) study on high mobility indium oxide thin films and thin-film transistors by means of plasma-enhanced atomic layer deposition = 플라즈마 원자층 증착법을 이용한 고이동도 인듐 산화물 박막 및 트랜지스터 특성 연구link

Yeom, Hye-In; 염혜인; et al, 한국과학기술원, 2016

2
Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Im, Youngjun; Cho, Seong-In; Kim, Jingyu; Woo, Namgyu; Ko, Jong Beom; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.11, pp.1849 - 1852, 2023-11

3
Engineering a Subnanometer Interface Tailoring Layer for Precise Hydrogen Incorporation and Defect Passivation for High-End Oxide Thin-Film Transistors

Ko, Jong Beom; Cho, Seong-In; Park, Sang-Hee Ko, ACS APPLIED MATERIALS & INTERFACES, v.15, no.40, pp.47799 - 47809, 2023-09

4
Fabrication of a High-Performance Poly-Si Thin-Film Transistor Using a Poly-Si Film Prepared by Silicide-Enhanced Rapid Thermal Annealing Process

Yang, Yong Ho; Ahn, Kyung Min; Kang, Seung Mo; Mun, Seonhong; Ahn, Byung-Tae, ELECTRONIC MATERIALS LETTERS, v.10, no.6, pp.1081 - 1085, 2014-11

5
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Cho, Sung Haeng; Ko, Jong Beom; Ryu, Min Ki; Yang, Jong-Heon; Yeom, Hye-In; Lim, Sun Kwon; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.11, pp.3653 - 3657, 2015-11

6
Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

Ko, Jong Beom; Yeom, Hye In; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.37, no.1, pp.39 - 42, 2016-01

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