Showing results 1 to 5 of 5
(A) study on the femtosecond laser ablation of germanium single crystal = 게르마늄 단결정의 펨토초 레이저 어블레이션에 관한 연구link Park, Myung-Il; 박명일; et al, 한국과학기술원, 2005 |
Controlled recrystallization for low-current RESET programming characteristics of phase-change memory with Ge-doped SbTe Wu, Zhe; Zhang, Gang; Park, Young-Wook; Kang, Stephen D.; Lyeo, Ho-Ki; Jeong, Doo-Seok; Jeong, Jeung-hyun; et al, APPLIED PHYSICS LETTERS, v.99, no.14, 2011-10 |
Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition Kim, HS; Lee, JeongYong, THIN SOLID FILMS, v.350, no.1-2, pp.14 - 20, 1999-08 |
Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature Wu, Zhe; Lee, Su-Youn; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo-Seok; Jeong, Jeung-hyun; No, Kwang-Soo; et al, APPLIED PHYSICS LETTERS, v.96, no.13, 2010-03 |
XRD studies on the femtosecond laser ablated single-crystal germanium in air Park, MI; Kim, CS; Park, Chong-Ook; Jeoung, SC, OPTICS AND LASERS IN ENGINEERING, v.43, no.12, pp.1322 - 1329, 2005-12 |
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