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Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject ferroelectricity▼ahafnium-zirconium oxide($Hf_{0.5}Zr_{0.5}O_2$)▼aruthenium oxide($RuO_2$)▼aatomic layer deposition(ALD)▼atitanium nitride(TiN)▼ametal-ferroelectric-metal(MFM) capacitor▼aoxygen vacancy($V_o$)▼areliability▼awake-up effect▼anon-volatile memory

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(A) study on the material, electrical and reliability properties of $Hf_{0.5}Zr_{0.5}O_2$ based ferroelectric devices with $RuO_2$ electrodes by atomic layer deposition = 원자층 증착법을 이용한 루테늄 옥사이드 산화물 전극에 따른 하프늄-지르코늄 옥사이드 기반 강유전체 소자의 물성 분석, 전기적 특성과 신뢰성 특성 연구link

Cho, Sung Hyun; Park, Sang Hee; et al, 한국과학기술원, 2019

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