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Showing results 1 to 4 of 4

1
Enhanced leakage current properties of Ni-doped Ba0.6Sr0.4TiO3 thin films driven by modified band edge state

Seo, Hyungtak; Kim, Young-Bae; Lucovsky, Gerald; Kim, Il-Doo; Chung, Kwun-Bum; Kobayashi, Hikaru; Choi, Duck-Kyun, JOURNAL OF APPLIED PHYSICS, v.107, no.2, 2010-01

2
High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates

Kang, KyongTae; Lim, Mi-Hwa; Kim, Ho Gi; Kim, Il-Doo; Hong, Jae-Min, APPLIED PHYSICS LETTERS, v.90, no.4, pp.1013 - 1017, 2007-01

3
InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator

Kim, Dong-Hun; Seo, Hyung-Tak; Chung, Kwun-Bum; Cho, Nam-Gyu; Kim, Ho-Gi; Kim, Il-Doo, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.10, pp.964 - 968, 2010-01

4
Overview of electroceramic materials for oxide semiconductor thin film transistors

Park, Jin-Seong; Kim, H; Kim, Il-Doo, JOURNAL OF ELECTROCERAMICS, v.32, no.2-3, pp.117 - 140, 2014-05

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