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Epitaxial growth of GaN on LaAlO3(100) substrate by RF plasma assisted molecular beam epitaxy Lee, JJ; Kang, KY; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, TW; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.11, pp.6487 - 6488, 1999-11 |
Growth and characterization of zinc-oxide films grown by using plasma-assisted molecular beam epitaxy on (111) silicon substrates with Ti and titanium compound buffer layers Yang, Sang Mo; Han, Seok Kyu; Kang, Dong-Suk; Kim, Jae Goo; Hong, Soon-Ku; Lee, Jae Wook; Lee, JeongYong; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, pp.276 - 281, 2008-07 |
MBE growth of wurtzite GaN on LaAlO3 (100) substrate Lee, JJ; Park, YS; Yang, CS; Kim, HS; Kim, KH; Kang, KY; Kang, TW; et al, JOURNAL OF CRYSTAL GROWTH, v.213, no.1-2, pp.33 - 39, 2000-05 |
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