Showing results 1 to 4 of 4
Factors Determining the Resistive Switching Behavior of Transparent InGaZnO-Based Memristors Qin, Fei; Zhang, Yuxuan; Park, Honghwi; Kim, Chung Soo; Lee, Dong Hun; Jiang, Zhong-Tao; Park, Jeongmin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.7, 2022-07 |
Parallel operation of Self-Limited Analog Programming for Fast Array-Level Weight Programming and Update Song, Hanchan; An, Jangho; Son, Seoil; Kim, Young Seok; Park, Juseong; Jeon, Jae Bum; Kim, Geunyoung; et al, Advanced Intelligent Systems, v.2, no.7, pp.2000014, 2020-07 |
Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics Cho, Seong-In; Jeon, Jae Bum; Kim, Joo Hyung; Lee, Seung Hee; Jeong, Wooseok; 김진규; Kim, Geunyoung; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.9, no.32, pp.10243 - 10253, 2021-08 |
Threshold Modulative Artificial GABAergic Nociceptor Kim, Geunyoung; Lee, Younghyun; Jeon, Jae Bum; Cheong, Woon Hyung; Park, Woojoon; Song, Hanchan; Kim, Kyung Min, ADVANCED MATERIALS, v.35, no.47, 2023-11 |
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