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Barrier properties and failure mechanism of Ta-Si-N thin films for Cu interconnection Lee, YJ; Suh, BS; Kwon, MS; Park, Chong-Ook, JOURNAL OF APPLIED PHYSICS, v.85, no.3, pp.1927 - 1934, 1999-02 |
Influence of vacuum-annealing on the diffusion barrier properties of MOCVD TiN for Cu metallization Lee, JG; Cho, HL; Lee, E; Lee, JeongYong; Kim, K; Lee, JM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.35, pp.S65 - S70, 1999-07 |
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