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Showing results 1 to 6 of 6

1
Atomic layer deposition of ruthenium thin films for copper glue layer

Kwon, OK; Kim, JH; Park, HS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.2, pp.G109 - G112, 2004-01

2
Effects of the annealing in Ar and H-2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition

Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun , Soung Soon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5781 - 5786, 1996-11

3
Enhancement of iodine adsorption on ruthenium glue layer for seedless CECVD of Cu

Lee, HB; Kwak, DK; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.2, pp.C39 - C42, 2005

4
Enhancement of Iodine Adsorption Using I2 Plasma for Seedless Catalyst-Enhanced CVD of Copper

Kwon, Oh-Kyum; Kim, Jae-Hoon; Park, Hyoung-Sang; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.8, pp.109 - 111, 2003-06

5
Grain growth of copper films prepared by chemical vapour deposition

Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.8, no.4, pp.217 - 221, 1997-08

6
Plasma-enhanced atomic layer deposition of ruthenium thin films

Kwon, OK; Kwon, SH; Park, HS; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.4, pp.C46 - C48, 2004

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