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Showing results 1 to 9 of 9

1
Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering

Lee, Yeonjoo; Ahmed, Towfiq; Wang, Xuejing; Pettes, Michael T.; Kim, Yeonhoo; Park, Jeongwon; Yang, Woo Seok; et al, APL MATERIALS, v.12, no.3, 2024-03

2
Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs

Bae, Jaehan; Ma, Boo Soo; Jeon, Gukjin; Jeong, Wooseok; Je, Chang Han; Kim, Taek-Soo; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763, 2019-11

3
Formation mechanism of ZnSiO(3) nanoparticles embedded in an amorphous interfacial layer between a ZnO thin film and an n-Si (001) substrate due to thermal treatment

Yuk, Jong Min; Lee, Jeong-Yong; Jung, J. H.; Lee, D. U.; Kim, T. W.; Son, D. I.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04

4
Improved morphological stability of CoSi2 layer by in situ growth on polycrystalline silicon using reactive chemical vapor deposition

Lee, HS; Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.16 - 20, 2002-01

5
Improvement in thermal stability of chemical vapor deposition CoSi 2/polycrystalline silicon using tin and amorphous silicon interlayers

Hong J.E.; Kim S.I.; Ahn, Byung Tae; Lee H.S., JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS , v.45, no.2 A, pp.710 - 713, 2006-02

6
Low Voltage Operating Field Effect Transistors with Composite In2O3-ZnO-ZnGa2O4 Nanofiber Network as Active Channel Layer

Choi, Seung-Hoon; Jang, Bong-Hoon; Park, Jin-Seong; Demadrille, Renaud; Tuller, Harry L.; Kim, Il-Doo, ACS NANO, v.8, no.3, pp.2318 - 2327, 2014-03

7
Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process

Kim, TW; Choo, DC; Shim, JH; Jung, M; Kang, SO; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.79, no.1, pp.120 - 122, 2001-07

8
SCALING THE SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR INTO THE 0.1-MU-M REGIME USING VERTICAL DOPING ENGINEERING

YAN, RH; OURMAZD, A; LEE, KF; Jeon, DukYoung; PINTO, MR, APPLIED PHYSICS LETTERS, v.59, no.25, pp.3315 - 3317, 1991-12

9
Stateful In‐Memory Logic System and Its Practical Implementation in a TaOx‐Based Bipolar‐Type Memristive Crossbar Array

Kim, Young Seok; Son, Myeong Won; Song, Hanchan; Park, Juseong; An, Jangho; Jeon, Jae Bum; Kim, Geun Young; et al, Advanced Intelligent Systems, v.2, no.3, pp.1900156, 2020-03

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