Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Subject DISORDER

Showing results 1 to 6 of 6

1
A medium energy ion scattering analysis of the Si-SiO2 interface formed by ion beam oxidation of silicon

Kim, YP; Choi, Si-Kyung; Ha, YH; Kim, Sehun; Kim, HK; Moon, DW, APPLIED SURFACE SCIENCE, v.117, pp.207 - 211, 1997-06

2
Advances in thermoelectric AgBiSe2: Properties, strategies, and future challenges

Jang, Hanhwi; Jung, Yeon Sik; Oh, Min-Wook, HELIYON, v.9, no.11, 2023-11

3
Atomic arrangements and formation mechanisms of the CuPt-type ordered structure in CdxZn1-xTe epilayers grown on GaAs substrates

Kim, TW; Lee, DU; Choo, DC; Lee, HS; Lee, JeongYong; Park, HL, APPLIED PHYSICS LETTERS, v.78, no.7, pp.922 - 924, 2001-02

4
Effect of Ta content on the phase transition and piezoelectric properties of lead-free (K0.48Na0.48Li0.04)(Nb0.995-xMn0.005Tax)O-3 thin film

Ahn, Chang-Won; Seog, Hae-Jin; Ullah, Aman; Lee, Sun-Young; Kim, Jin-Won; Kim, Sang-Su; Park, Moon-Kyu; et al, JOURNAL OF APPLIED PHYSICS, v.111, no.2, 2012-01

5
Increased luminescent efficiency of perovskite light emitting diodes based on modified two-step deposition method providing gradient concentration

Kim, Joo Sung; Cho, Himchan; Wolf, Christoph; Yun, Hyung Joong; Heo, Jung-Min; Lee, Tae-Woo, APL MATERIALS, v.6, no.11, 2018-11

6
Long-range order in CdxZn1-xTe epilayers grown on GaAs substrates

Lee, HS; Lee, JeongYong; Kim, TW; Park, HL, JOURNAL OF CRYSTAL GROWTH, v.233, no.4, pp.749 - 754, 2001-12

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