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1
Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM; Song, JH; Yu, PW, JOURNAL OF APPLIED PHYSICS, v.89, no.5, pp.2617 - 2621, 2001-03

2
Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; et al, APPLIED PHYSICS LETTERS, v.79, no.16, pp.2594 - 2596, 2001-10

3
Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Song, JH; Yu, PW; Yang, GM; Kim, CS, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1104 - 1107, 2002-02

4
Response to "Comment on Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells " [Appl. Phys. Lett. 81, 3100 (2002)]

Cho, HK; Lee, JeongYong; Sharma, N; Humphreys, CJ; Yang, GM; Kim, CS; Song, JH; et al, APPLIED PHYSICS LETTERS, v.81, no.16, pp.3102 - 3103, 2002-10

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