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1
89-GHZFT ROOM-TEMPERATURE SILICON MOSFETS

YAN, RH; LEE, KF; Jeon, DukYoung; KIM, YO; PARK, BG; PINTO, MR; TENNANT, DM; et al, IEEE ELECTRON DEVICE LETTERS, v.13, no.5, pp.256 - 258, 1992-05

2
GATE TECHNOLOGY FOR 0.1-MU-M SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR USING G-LINE EXPOSURE AND DEEP-ULTRAVIOLET HARDENING

Jeon, DukYoung; CHIN, GM; LEE, KF; YAN, RH; WESTERWICK, E; CERULLO, M, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.12, no.4, pp.2800 - 2804, 1994

3
GATE TECHNOLOGY FOR 89 GHZ VERTICAL DOPING ENGINEERED SI METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

Jeon, DukYoung; TENNANT, DM; KIM, YO; YAN, RH; LEE, KF; EARLY, K, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.10, no.6, pp.2922 - 2926, 1992

4
SCALING THE SI METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR INTO THE 0.1-MU-M REGIME USING VERTICAL DOPING ENGINEERING

YAN, RH; OURMAZD, A; LEE, KF; Jeon, DukYoung; PINTO, MR, APPLIED PHYSICS LETTERS, v.59, no.25, pp.3315 - 3317, 1991-12

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