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1
(A) study on the characteristics of indium-aluminum-zinc oxide thin-film transistors according to aluminum content using plasma-enhanced atomic layer deposition = 플라즈마 원자층 증착법을 이용한 알루미늄 함량에 따른 인듐-알루미늄-아연 산화물 박막 트랜지스터의 특성 연구link

Woo, Namgyu; Park, Sang-Hee Ko; et al, 한국과학기술원, 2023

2
Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving

Im, Youngjun; Cho, Seong-In; Kim, Jingyu; Woo, Namgyu; Ko, Jong Beom; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.11, pp.1849 - 1852, 2023-11

3
Inserting Interfacial Layer for Atomic-Scaled Hydrogen Control to Enhance Electrical Properties of InZnO TFTs

Cho, Seong-In; Woo, Namgyu; Jeong, Hyun-Jun; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.44, no.4, pp.650 - 653, 2023-04

4
Optimal Aluminum Doping Method in PEALD for Designing Outstandingly Stable InAlZnO TFT

Woo, Namgyu; Cho, Seong-In; Park, Sang-Hee Ko, ADVANCED MATERIALS INTERFACES, v.10, no.12, 2023-04

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