Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Rodwell, Mark J. W.
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| A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices Yuan, Yu; Wang, Lingquan; Yu, Bo; Shin, Byungha; Ahn, Jaesoo; McIntyre, Paul C.; Asbeck, Peter M.; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.485 - 487, 2011-04 |
| In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J.; Baraskar, Ashish K.; Thibeault, Brian J.; Gossard, Arthur C.; Rodwell, Mark J. W.; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.11, pp.1128 - 1130, 2009-11 |
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