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Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author McIntyre, Paul C.

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Showing results 1 to 6 of 6

1
A Distributed Model for Border Traps in Al2O3 - InGaAs MOS Devices

Yuan, Yu; Wang, Lingquan; Yu, Bo; Shin, Byungha; Ahn, Jaesoo; McIntyre, Paul C.; Asbeck, Peter M.; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.485 - 487, 2011-04

2
Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Shin, Byungha; Clemens, Jonathon B.; Kelly, Michael A.; Kummel, Andrew C.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.25, 2010-06

3
Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric

Bentley, Steven J.; Holland, Martin; Li, Xu; Paterson, Gary W.; Zhou, HP; Ignatova, Olesya; Thoms, Stephen; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.4, pp.494 - 496, 2011-04

4
In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J.; Baraskar, Ashish K.; Thibeault, Brian J.; Gossard, Arthur C.; Rodwell, Mark J. W.; et al, IEEE ELECTRON DEVICE LETTERS, v.30, no.11, pp.1128 - 1130, 2009-11

5
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Shin, Byungha; Weber, Justin R.; Long, Rathnait D.; Hurley, Paul K.; Van de Walle, Chris G.; McIntyre, Paul C., APPLIED PHYSICS LETTERS, v.96, no.15, 2010-04

6
Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Shin, Byungha; Cagnon, Joel; Long, Rathnait D.; Hurley, Paul K.; Stemmer, Susanne; McIntyre, Paul C., ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.8, pp.40 - 43, 2009

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