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Showing results 1 to 5 of 5

1
Effect of H-2 addition during PECVD on the moisture barrier property and environmental stability of H:SiNx film

Kim, Jin Kyoo; Jeong, Wooseok; Lee, Seunghee; Jeong, Sehun; Park, Sang-Hee Ko, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.104, no.12, pp.6670 - 6677, 2021-12

2
Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Lee, Seunghee; Kim, Miso; Mun, Geumbi; Ko, Jongbeom; Yeom, Hye-In; Lee, Gwang-Heum; Shong, Bonggeun; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.33, pp.40134 - 40144, 2021-08

3
Effects of Hydroxyl Group in AlOx Gate Insulator on the Negative Bias Illumination Instability of In-Ga-Zn-O Thin Film Transistors

Park, Kyoung Woo; Jeon, Gukjin; Lee, Seunghee; Ko, Jong Beom; Park, Sang-Hee Ko, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.216, no.6, 2019-03

4
High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature

Park, Kyoung Woo; Lee, Seunghee; Lee, Hyunkoo; Cho, Yong-Hwan; Park, Yong Cheon; Im, Sung Gap; Park, Sang-Hee Ko, RSC ADVANCES, v.9, no.1, pp.58 - 64, 2019-01

5
Oxide semiconductor based vertical TFT for ultra high-resolution backplane technology

Lee, Kwang Heum; Lee, Seunghee; Yeom, Hye-In; Ko, Jong Beom; Hwang, Chi-Sun; Park, Sang-Hee Ko, 25th International Display Workshops, IDW 2018, pp.280 - 282, International Display Workshops, 2018-12

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