Showing results 1 to 14 of 14
Abnormal photocurrent-voltage behavior of GaAs/AlGaAs multiple shallow quantum well p-i-n diodes Kwon, OK; Lee, KS; Chu, HY; Lee, EH; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.72, no.20, pp.2586 - 2588, 1998-05 |
All-optical oscillator based on the anti-parallel connection of two GaAs/AlGaAs multiple shallow quantum well PINIP diodes Kwon, OK; Lee, KS; Chu, HY; Lee, EH; Ahn, Byung Tae, ELECTRONICS LETTERS, v.34, no.3, pp.306 - 307, 1998-02 |
Effects of design parameters on non-biased optical bistable devices using multiple quantum well nipi-diode structure Kwon, OK; Lee, KS; Lee, EH; Ahn, Byung Tae, MICROELECTRONIC ENGINEERING, v.43-4, pp.271 - 276, 1998-08 |
Evolution of the surface cross-hatch pattern in InxGa1-xAs/GaAs layers grown by metal-organic chemical vapor deposition Yoon, M; Lee, B; Baek, JH; Park, HyoHoon; Lee, EH; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.68, no.1, pp.16 - 18, 1996-01 |
Fabrication and characterization of electrically tunable high-T-c superconducting resonators incorporating barium strontium titanate as a tuning material Lee, EH; Sok, J; Park, SJ; Lee, JS; Song, IH; Kwak, J; Jung, KR; et al, SUPERCONDUCTOR SCIENCE TECHNOLOGY, v.12, no.11, pp.981 - 984, 1999-11 |
Fabrication of high quality YBa2Cu3Oy thin films using pulsed laser deposition Lee, EH; Park, SJ; Song, IH; Song, I; Gohng, J; Sok, J; Lee, JW; et al, IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, v.7, no.2, pp.1196 - 2, 1997-06 |
Formation of stacking faults and misfit dislocations during Zn diffusion-enhanced intermixing of a GaInAsP/InP heterostructure Park, HyoHoon; Nam, ES; Lee, YT; Lee, EH; Lee, JeongYong; Kwon, OD, MRS Symposium 1990, pp.591 - 591, 1990-12-01 |
Growth and Characterization of Calcium Fluoride on Si and GaAs Lee, Jeong Yong; Park, KH; Lee, HC; Yoo, BS; Park, SJ; Lee, EH, Proc.5th Int. Symp. on Physics of Semiconductors and Application, pp.302 - 302, 1990-08-01 |
High power performance of nonbiased optical bistable devices using multiple shallow quantum well p-i-n-i-p diodes Kwon, OK; Lee, KS; Lee, EH; Ahn, Byung Tae, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.3B, pp.1418 - 1420, 1998-03 |
Low Threshold Current and Single-Mode SurfaceEmitting Laser Buried on Amorphous GaAs Ahn, Byung Tae; Park, HH; You, BS; Chu, HY; Lee, EH; Park, MS, JAPANESE JOURNAL OF APPLIED PHYSICS , v.35, no.2, pp.1378 - 1381, 1996-12 |
Optical and electrical tuning of the frequency in self-oscillating multiple shallow quantum-well diodes Kwon, OK; Lee, KS; Chu, HY; Lee, EH; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.17, pp.2537 - 2539, 1999-04 |
Stabilization of transverse mode emission in vertical-cavity surface-emitting lasers by deposition of high refractive index amorphous GaAs Park, HyoHoon; Yoo, BS; Chu, HY; Lee, EH; Park, MS; Ahn, Byung Tae; Shin, JH; et al, MRS Symposium 1996, pp.75 - 80, MRS, 1996-01-02 |
Strain relaxation via interface nucleation of misfit dislocations in intermixing layers Park, HyoHoon; Lee, JK; Lee, EH; Lee, JeongYong; Hong, SK, MRS Symposium 1992, pp.479 - 487, MRS, 1992-05-01 |
Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04 |
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