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Showing results 1 to 12 of 12

1
1.1 mW single-mode output power of all-monolithic 1.3 mu m InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition

Park, MR; Kwon, OK; Yoo, BS; Lee, KH; Song, HW; Han, WS; Ko Park, Sang-Hee; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.44, no.1-7, pp.101 - 103, 2005

2
Abnormal photocurrent-voltage behavior of GaAs/AlGaAs multiple shallow quantum well p-i-n diodes

Kwon, OK; Lee, KS; Chu, HY; Lee, EH; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.72, no.20, pp.2586 - 2588, 1998-05

3
All-optical oscillator based on the anti-parallel connection of two GaAs/AlGaAs multiple shallow quantum well PINIP diodes

Kwon, OK; Lee, KS; Chu, HY; Lee, EH; Ahn, Byung Tae, ELECTRONICS LETTERS, v.34, no.3, pp.306 - 307, 1998-02

4
Atomic layer deposition of ruthenium thin films for copper glue layer

Kwon, OK; Kim, JH; Park, HS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.2, pp.G109 - G112, 2004-01

5
Bottom-up filling of submicrometer features in catalyst-enhanced chemical vapor deposition of copper

Shim, KC; Lee, HB; Kwon, OK; Park, HS; Koh, W; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.2, pp.109 - 113, 2002-02

6
Effects of design parameters on non-biased optical bistable devices using multiple quantum well nipi-diode structure

Kwon, OK; Lee, KS; Lee, EH; Ahn, Byung Tae, MICROELECTRONIC ENGINEERING, v.43-4, pp.271 - 276, 1998-08

7
Enhancement of the film growth rate by promoting iodine adsorption in the catalyst-enhanced chemical vapor deposition of Cu

Kwon, OK; Lee, HB; Kang, Sang-Won; Park, HS, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A, v.20, no.2, pp.408 - 412, 2002

8
High power performance of nonbiased optical bistable devices using multiple shallow quantum well p-i-n-i-p diodes

Kwon, OK; Lee, KS; Lee, EH; Ahn, Byung Tae, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.3B, pp.1418 - 1420, 1998-03

9
Optical and electrical tuning of the frequency in self-oscillating multiple shallow quantum-well diodes

Kwon, OK; Lee, KS; Chu, HY; Lee, EH; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.17, pp.2537 - 2539, 1999-04

10
PEALD of a ruthenium adhesion layer for copper interconnects

Kwon, OK; Kwon, SH; Park, HS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.12, pp.C753 - C756, 2004

11
Plasma-enhanced atomic layer deposition of Ru-TiN thin films for copper diffusion barrier metals

Kwon, SH; Kwon, OK; Min, JS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.6, pp.G578 - G581, 2006

12
Plasma-enhanced atomic layer deposition of ruthenium thin films

Kwon, OK; Kwon, SH; Park, HS; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.4, pp.C46 - C48, 2004

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