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Metal-Ferroelectric-Insulator-Semiconductor (MFIS) FET's Using LiNbO3/A1N/Si(100) Structures for Nonvolatile Memory Applications No, Kwangsoo; Jung, Soon-Won; Jeong, Sang-Hyun; Kim, Yong-Seong; In, Yong-Il; Kim, Wan-Seop; Ban, Yong-Jun, The 16th International Symposium on Intergrated Ferroelectrics, pp.0 - 0, 2004-04-06 |
Properties of single transistor type ferroelectric-gated FET’s for nonvolatile memory applications No, Kwangsoo; Kim, Yong-Seong; Jung, Soon-Won; Ban, Yong-Jun; Jeong, Sang-Hyun; Kim, Wan-Seop; Kim, Young-Kil, 5th Korea-Japan Conference on Ferroelectricity, pp.0 - 0, 2004-08-19 |
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