Showing results 6 to 8 of 8
Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Gwang-Geun; et al, APPLIED PHYSICS LETTERS, v.96, no.23, 2010-06 |
Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon, Sung-Min; Jung, Soon-Won; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun; Park, Sang-Hee Ko; Ishiwara, Hiroshi, ORGANIC ELECTRONICS, v.11, no.11, pp.1746 - 1752, 2010-11 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Ishiwara, Hiroshi, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.5, pp.141 - 143, 2010 |
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