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3
Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study

Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Cho, SM; Kwon, YJ; Oh, JE, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06

4
Indium-related novel architecture of GaN nanorod grown by molecular beam epitaxy

Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS; Huh, Y, CHEMICAL PHYSICS LETTERS, v.412, pp.454 - 458, 2005-09

5
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates

Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06

6
Synthesis of aligned GaN nanorods on Si (111) by molecular beam epitaxy

Kim, YH; Lee, JeongYong; Lee, SH; Oh, JE; Lee, HS, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.80, pp.1635 - 1639, 2005-05

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