Showing results 5 to 9 of 9
Fabrication and characteristics of phase change memory based on block copolymer lithography = 블록공중합체 리소그래피를 이용한 상변화 메모리의 제작 및 특성분석link Yoon, Jong-Moon; 윤종문; et al, 한국과학기술원, 2012 |
Flexible Crossbar-Structured Phase Change Memory Array via Mo-Based Interfacial Physical Lift-Off Kim, Do Hyun; Lee, Han Eol; You, Byoung Kuk; Cho, Sung Beom; Mishra, Rohan; Kang, Il-Suk; Lee, Keon Jae, ADVANCED FUNCTIONAL MATERIALS, v.29, no.6, 2019-02 |
Flexible One Diode-One Phase Change Memory Array Enabled by Block Copolymer Self-Assembly Mun, Beomho; You, Byoungkuk; Yang, Se Ryeun; Yoo, Hyeon Gyun; Kim, JongMin; Park, Woon-Ik; Yin, You; et al, ACS NANO, v.9, no.4, pp.4120 - 4128, 2015-04 |
Preparation and observation of an artifact-free Ge2Sb2Te5 TEM specimen by the small angle cleavage technique Kim, MS; Kim, Ho Gi, MATERIALS CHARACTERIZATION, v.56, no.3, pp.245 - 249, 2006-04 |
Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction Park, Woon-Ik; You, Byoung-Kuk; Mun, Beom-Ho; Seo, Hyeon Kook; Lee, Jeong-Yong; Hosaka, Sumio; Yin, You; et al, ACS NANO, v.7, no.3, pp.2651 - 2658, 2013-03 |
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