Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Title 

Showing results 11641 to 11660 of 19268

11641
Plasma- mediated fabrication of ultrathin NiAl nanosheets having rich oxygen vacancies and doped nitrogen sites and their utilization for high activity and robust stability in photoelectrochemical water oxidation

Kim, Keon-Han; Choi, Jae Won; Lee, Heebin; Moon, Byeong Cheul; Park, Dong Gyu; Choi, Won Ho; Kang, Jeung Ku, JOURNAL OF MATERIALS CHEMISTRY A, v.6, no.46, pp.23283 - 23288, 2018-12

11642
Plasma-Activacted Evaporation 방법에 의해 증착된 Copper Phthalocyanine 박막의 전기적 특성에 관한 연구

이원종, 한국재료학회 1993 추계학술연구발표회, pp.0 - 0, 1993-01-01

11643
Plasma-activated evaporation 방법에 의해 증착된 copper phthalocyanine 박막의 구조분석 = Structural analysis of copper phthalocyanine thin films prepared by plasma-activated evaporationlink

김준태; Kim, Jun-Tae; et al, 한국과학기술원, 1992

11644
Plasma-Assisted CMP for Planarization of Adhesive Polymers in 3D Stacked Semiconductor Devices

Kang, Sukkyung; Park, Juseong; Jeon, Chan Su; Kim, Kyung Min; Kim, Sanha, International Conference on Planarization/CMP Technology, ICPT 2023, International Conference on Planarization Technology (ICPT), 2023-11-01

11645
Plasma-assisted formation of metallic nickel domains on nickel-iron-molybdenum oxyhydroxide for efficient, electrocatalytic oxygen-evolution reaction

Moon, Byeong Cheul; Kang, Jeung Ku, 2019 ACS National Meeting & Exposition, American Chemical Society, 2019-04-02

11646
Plasma-assisted molecular beam epitaxy of In xGa 1-XN films on: C-plane sapphire substrates

Shin, EunJung; Seok, LimDong; Lim, SeHwan; Han, SeokKyu; Lee, HyoSung; Hong, SoonKu; Joeng, Myoungho; et al, Korean Journal of Materials Research, v.22, no.4, pp.185 - 189, 2012-04

11647
Plasma-assisted molecular-beam epitaxy of ZnO films on (0001) Al2O3: Effects of the MgO buffer layer thickness

Kim, Jae Goo; Han, Seok Kyu; Kang, Dong-Suk; Yang, Sang Mo; Hong, Soon-Ku; Lee, Jae Wook; Lee, Jeong Yong; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.271 - 275, 2008-07

11648
Plasma-enhanced ALD of titanium-silicon-nitride using TiCl4, SiH4, and N-2/H-2/Ar plasma

Park, JS; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.8, pp.C87 - C89, 2004

11649
Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4, SiH4, and N2/H2/Ar Plasma

KANG SANG WON, Atomic Layer Deposition (ALD) 2002, 2002-01-01

11650
Plasma-Enhanced Atomic Layer Deposition of Aluminum Grown by a Sequential Supply of TMA and H2

Kang, Sang-Won, 3rd International AVS Conference on Microelectronics and Interfaces, ICMI, 2002-02

11651
Plasma-enhanced atomic layer deposition of Ru-TiN thin films for copper diffusion barrier metals

Kwon, SH; Kwon, OK; Min, JS; Kang, SW, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.6, pp.G578 - G581, 2006

11652
Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for the Application of Cu Diffusion Barrier

KANG SANG WON, AVS 6th International Conference on Atomic Layer Deposition, pp.0 - 0, 2004-08-01

11653
Plasma-enhanced atomic layer deposition of ruthenium thin films

Kwon, OK; Kwon, SH; Park, HS; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.4, pp.C46 - C48, 2004

11654
Plasma-enhanced atomic layer deposition of Ta-N thin films

Park, JS; Park, HS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.28 - 32, 2002-01

11655
Plasma-enhanced atomic layer deposition of TaN thin films using tantalum-pentafluoride and N-2/H-2/Ar plasma

Chung, Hoi-Sung; Kwon, Jung-Dae; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.153, no.11, pp.C751 - C754, 2006

11656
Plasma-enhanced atomic layer deposition of tantalum nitrides using hydrogen radicals as a reducing agent

Park, JS; Lee, MJ; Lee, CS; Kang, Sang-Won, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.4, no.4, pp.17 - 19, 2001-04

11657
Plasma-Enhanced Atomic Layer Deposition of TiAlN

KANG SANG WON, 4th International AVS Conference on Microelectronics and Interfaces, pp.0 - 0, 2003-01-01

11658
Plasma-enhanced atomic layer deposition of TiN thin film using TiCl4 and N2/H2/Ar radicals

KANG SANG WON, Atomic layer Deposition (ALD) 2002, 2002-01-01

11659
Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors

Ko, Jong Beom; Yeom, Hye In; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.37, no.1, pp.39 - 42, 2016-01

11660
Plasma-Enhanced Atomic Layer Depposition of HfO2 Thin Films Using Oxygen Plasma

Sang-Won Kang, 208th Meeting of The Electrochemical Society, 2005

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