Improvement of On-Off-Current Ratio in TiOx Active-Channel TFTs Using N2O Plasma Treatment

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dc.contributor.authorPark, JWko
dc.contributor.authorLee, DYko
dc.contributor.authorKwon, Hko
dc.contributor.authorYoo, Seunghyupko
dc.date.accessioned2013-08-29T02:15:47Z-
dc.date.available2013-08-29T02:15:47Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-04-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.30, pp.362 - 364-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/176591-
dc.description.abstractWithout sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N2O plasma treatment to improve the on-off-current ratio, in n-type titanium oxide (TiOx) active-channel thin-film transistors. While the high-power (275 W) N2O plasma treatment oxidizes the whole TiOx channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleImprovement of On-Off-Current Ratio in TiOx Active-Channel TFTs Using N2O Plasma Treatment-
dc.typeArticle-
dc.identifier.wosid000264629100017-
dc.identifier.scopusid2-s2.0-67349115977-
dc.type.rimsART-
dc.citation.volume30-
dc.citation.beginningpage362-
dc.citation.endingpage364-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2009.2013647-
dc.contributor.localauthorYoo, Seunghyup-
dc.contributor.nonIdAuthorPark, JW-
dc.contributor.nonIdAuthorLee, DY-
dc.contributor.nonIdAuthorKwon, H-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorN2O plasma treatment-
dc.subject.keywordAuthoron-off-current ratio-
dc.subject.keywordAuthorplasma-enhanced atomic-layer deposition (PEALD)-
dc.subject.keywordAuthorthin-film transistor (TFT)-
dc.subject.keywordAuthortitanium oxide (TiOx)-
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