DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, JW | ko |
dc.contributor.author | Lee, DY | ko |
dc.contributor.author | Kwon, H | ko |
dc.contributor.author | Yoo, Seunghyup | ko |
dc.date.accessioned | 2013-08-29T02:15:47Z | - |
dc.date.available | 2013-08-29T02:15:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-04 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.30, pp.362 - 364 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/176591 | - |
dc.description.abstract | Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N2O plasma treatment to improve the on-off-current ratio, in n-type titanium oxide (TiOx) active-channel thin-film transistors. While the high-power (275 W) N2O plasma treatment oxidizes the whole TiOx channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Improvement of On-Off-Current Ratio in TiOx Active-Channel TFTs Using N2O Plasma Treatment | - |
dc.type | Article | - |
dc.identifier.wosid | 000264629100017 | - |
dc.identifier.scopusid | 2-s2.0-67349115977 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.beginningpage | 362 | - |
dc.citation.endingpage | 364 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2013647 | - |
dc.contributor.localauthor | Yoo, Seunghyup | - |
dc.contributor.nonIdAuthor | Park, JW | - |
dc.contributor.nonIdAuthor | Lee, DY | - |
dc.contributor.nonIdAuthor | Kwon, H | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | N2O plasma treatment | - |
dc.subject.keywordAuthor | on-off-current ratio | - |
dc.subject.keywordAuthor | plasma-enhanced atomic-layer deposition (PEALD) | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | titanium oxide (TiOx) | - |
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