A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

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dc.contributor.authorLee, Kiwonko
dc.contributor.authorLee, Byoungwookko
dc.contributor.authorYoon, Sunwoongko
dc.contributor.authorHong, Jung-hoko
dc.contributor.authorYang, Kyounghoonko
dc.date.accessioned2013-08-22T02:29:03Z-
dc.date.available2013-08-22T02:29:03Z-
dc.date.created2013-08-21-
dc.date.created2013-08-21-
dc.date.issued2013-07-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/175561-
dc.description.abstractWe report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 mu m. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 mu m. The Geiger-mode characteristics have been measured at 240-280 K for a 20 mu m diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8 x 10(-3), a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74 x 10(-16) W/Hz(1/2) at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching. (C) 2013 The Japan Society of Applied Physics-
dc.languageEnglish-
dc.publisherJAPAN SOC APPLIED PHYSICS-
dc.subjectQUANTUM KEY DISTRIBUTION-
dc.subjectPHOTON-DETECTION-
dc.subjectDIODE DETECTORS-
dc.subjectGUARD RINGS-
dc.subjectMULTIPLICATION-
dc.subjectSUPPRESSION-
dc.subjectPERFORMANCE-
dc.subjectJUNCTION-
dc.subjectDESIGN-
dc.titleA Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation-
dc.typeArticle-
dc.identifier.wosid000321333300016-
dc.identifier.scopusid2-s2.0-84880981420-
dc.type.rimsART-
dc.citation.volume52-
dc.citation.issue7-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.7567/JJAP.52.072201-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorLee, Kiwon-
dc.contributor.nonIdAuthorLee, Byoungwook-
dc.contributor.nonIdAuthorYoon, Sunwoong-
dc.contributor.nonIdAuthorHong, Jung-ho-
dc.type.journalArticleArticle-
dc.subject.keywordPlusQUANTUM KEY DISTRIBUTION-
dc.subject.keywordPlusPHOTON-DETECTION-
dc.subject.keywordPlusDIODE DETECTORS-
dc.subject.keywordPlusGUARD RINGS-
dc.subject.keywordPlusMULTIPLICATION-
dc.subject.keywordPlusSUPPRESSION-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusJUNCTION-
dc.subject.keywordPlusDESIGN-
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