Effects of Surface Recombination on Exciton Dynamics in GaN Nanorods

Abstract

We have investigated the optical properties of GaN nanorods with different diameters by micro-photoluminescence (PL) and time-resolved PL measurements grown on (111) Si substrates by using radio-frequency plasma-assisted molecular-beam epitaxy. In order to confirm the formation of the GaN nanorods and their physical dimension, we employed high resolution scanning electron microscopy. As the diameters of the nanorods decreased, the donor bound exciton (D(0)X) emission, which is mainly observed at low temperature for samples with larger diameters, rapidly quenched compared with the free exciton (FX). The activation energy of the FX for GaN nanorods with different diameters was also evaluated The decay times are a few tens of ps for both the D(0)X and the FX transitions The overall decay times decrease linearly with decreasing average diameter of the nanorods. Time-resolved PL studies show that surface recombination is dominant in determining the excitonic dynamics.