Polarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups

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dc.contributor.authorYu, Hojeongko
dc.contributor.authorCho, Han-Heeko
dc.contributor.authorCho, Chul-Heeko
dc.contributor.authorKim, Ki-Hyunko
dc.contributor.authorKim, Dong Yeongko
dc.contributor.authorKim, Bumjoonko
dc.contributor.authorOh, Joon Hakko
dc.date.accessioned2013-08-14T01:10:05Z-
dc.date.available2013-08-14T01:10:05Z-
dc.date.created2013-08-09-
dc.date.created2013-08-09-
dc.date.issued2013-06-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v.5, no.11, pp.4865 - 4871-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10203/175042-
dc.description.abstractA series of o-xylene and indene fullerene derivatives with varying frontier molecular orbital energy levels were utilized for assessing the impact of the number of solubilizing groups on the electrical performance of fullerene-based organic-field-effect transistors (OFETs). The charge-carrier polarity was found to be strongly dependent upon the energy levels of fullerene derivatives. The o-xylene C-60 monoadduct (OXCMA) and indene C-60 monoadduct (ICMA) exhibited unipolar n-channel behaviors with high electron mobilities, whereas the bis- and trisadducts of indene and o-xylene C-60 derivatives showed ambipolar charge transport. The OXCMA OFETs fabricated by solution shearing and molecular n-type doping showed an electron mobility of up to 2.28 cm(2) V-1 s(-1), which is one of the highest electron mobilities obtained from solution processed fullerene thin-film devices. Our findings systematically demonstrate the relationship between the energy level and charge carrier polarity and provide insight into molecular design and processing strategies toward high-performance fullerene-based OFETs.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectPOLYMER SOLAR-CELLS-
dc.subjectSUBSTITUTED C-60 DERIVATIVES-
dc.subjectOPEN-CIRCUIT VOLTAGE-
dc.subjectN-TYPE DOPANT-
dc.subjectORGANIC SEMICONDUCTORS-
dc.subjectCHARGE-TRANSPORT-
dc.subjectMATERIALS DESIGN-
dc.subjectPERFORMANCE-
dc.subjectMOBILITY-
dc.titlePolarity and Air-Stability Transitions in Field-Effect Transistors Based on Fullerenes with Different Solubilizing Groups-
dc.typeArticle-
dc.identifier.wosid000320484000052-
dc.identifier.scopusid2-s2.0-84879101347-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.issue11-
dc.citation.beginningpage4865-
dc.citation.endingpage4871-
dc.citation.publicationnameACS APPLIED MATERIALS & INTERFACES-
dc.identifier.doi10.1021/am400618r-
dc.contributor.localauthorKim, Bumjoon-
dc.contributor.nonIdAuthorYu, Hojeong-
dc.contributor.nonIdAuthorCho, Han-Hee-
dc.contributor.nonIdAuthorCho, Chul-Hee-
dc.contributor.nonIdAuthorKim, Ki-Hyun-
dc.contributor.nonIdAuthorKim, Dong Yeong-
dc.contributor.nonIdAuthorOh, Joon Hak-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorfullerene-
dc.subject.keywordAuthororganic-field-effect transistor-
dc.subject.keywordAuthorsolubilizing groups-
dc.subject.keywordAuthorn-type doping-
dc.subject.keywordAuthormolecular design-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusPOLYMER SOLAR-CELLS-
dc.subject.keywordPlusSUBSTITUTED C-60 DERIVATIVES-
dc.subject.keywordPlusOPEN-CIRCUIT VOLTAGE-
dc.subject.keywordPlusN-TYPE DOPANT-
dc.subject.keywordPlusORGANIC SEMICONDUCTORS-
dc.subject.keywordPlusCHARGE-TRANSPORT-
dc.subject.keywordPlusMATERIALS DESIGN-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMOBILITY-
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