DC Field | Value | Language |
---|---|---|
dc.contributor.author | Stolz, Arnaud | ko |
dc.contributor.author | Ko, Suck-Min | ko |
dc.contributor.author | Patriarche, Gilles | ko |
dc.contributor.author | Dogheche, Elhadj | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Decoster, Didier | ko |
dc.date.accessioned | 2013-08-08T05:46:46Z | - |
dc.date.available | 2013-08-08T05:46:46Z | - |
dc.date.created | 2013-02-28 | - |
dc.date.created | 2013-02-28 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.102, no.2, pp.021905 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174623 | - |
dc.description.abstract | We report here the experimental results on a field effect refractive index change into gallium nitride (GaN) structures. This effect is characterized through the common prism-coupling technique with the application of a vertical direct-current electric field. Surface plasmon propagation was used to increase the sensitivity of the electro-optic measurements. We have obtained a large refractive index variation for GaN epilayer, around 1.4 x 10(-2) at 1.55 mu m wavelength. In order to understand the origin of the index modulation, we have conducted a scanning transmission electron microscopy analysis and discussed the influence of threading dislocations density acting as traps and thermo-optic effect. According to recent works, we observed experimentally the optical response of a nonlinear electro-optic effect on GaN on Si(111) substrate and estimated a Kerr coefficient of about 2.14 x 10(-16)m(2) V-2. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776671] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | GAN | - |
dc.subject | LAYERS | - |
dc.title | Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000313670200024 | - |
dc.identifier.scopusid | 2-s2.0-84872742573 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 021905 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4776671 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Stolz, Arnaud | - |
dc.contributor.nonIdAuthor | Patriarche, Gilles | - |
dc.contributor.nonIdAuthor | Dogheche, Elhadj | - |
dc.contributor.nonIdAuthor | Decoster, Didier | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | LAYERS | - |
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