DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Dong Hyeop | ko |
dc.contributor.author | Kim, Ji Hye | ko |
dc.contributor.author | Shin, Young Min | ko |
dc.contributor.author | Yoon, Kyung Hoon | ko |
dc.contributor.author | Al-Ammar, Essam A. | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2013-08-08T05:43:25Z | - |
dc.date.available | 2013-08-08T05:43:25Z | - |
dc.date.created | 2013-04-02 | - |
dc.date.created | 2013-04-02 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | PROGRESS IN PHOTOVOLTAICS, v.21, no.2, pp.217 - 225 | - |
dc.identifier.issn | 1062-7995 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174527 | - |
dc.description.abstract | ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells for Cd-free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO:Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical-bath-deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO:Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO:Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO:Al film was developed. It consists of a 50-nm-thick ZnO:Al plasma protection layer deposited at a sputtering power of 50W and a 100-nm-thick ZnO:Al conducting layer deposited at a sputtering power of 200W. The introduction of a 50-nm-thick ZnO:Al layer deposited at 50W prevented plasma damage by sputtering, resulting in a high open-circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO:Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO:Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright (c) 2012 John Wiley & Sons, Ltd. | - |
dc.language | English | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.subject | CHEMICAL BATH DEPOSITION | - |
dc.subject | BUFFER LAYERS | - |
dc.subject | MODULES | - |
dc.subject | ZNS | - |
dc.subject | FABRICATION | - |
dc.title | Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO:Al film | - |
dc.type | Article | - |
dc.identifier.wosid | 000315328400009 | - |
dc.identifier.scopusid | 2-s2.0-84874277116 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 217 | - |
dc.citation.endingpage | 225 | - |
dc.citation.publicationname | PROGRESS IN PHOTOVOLTAICS | - |
dc.identifier.doi | 10.1002/pip.2319 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Shin, Dong Hyeop | - |
dc.contributor.nonIdAuthor | Kim, Ji Hye | - |
dc.contributor.nonIdAuthor | Shin, Young Min | - |
dc.contributor.nonIdAuthor | Yoon, Kyung Hoon | - |
dc.contributor.nonIdAuthor | Al-Ammar, Essam A. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cu(In | - |
dc.subject.keywordAuthor | Ga)Se2 solar cell | - |
dc.subject.keywordAuthor | ZnS buffer | - |
dc.subject.keywordAuthor | ZnO:Al window | - |
dc.subject.keywordAuthor | sputtering damage | - |
dc.subject.keywordPlus | CHEMICAL BATH DEPOSITION | - |
dc.subject.keywordPlus | BUFFER LAYERS | - |
dc.subject.keywordPlus | MODULES | - |
dc.subject.keywordPlus | ZNS | - |
dc.subject.keywordPlus | FABRICATION | - |
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