DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Jun-Ho | ko |
dc.contributor.author | Kang, Byung-Jin | ko |
dc.contributor.author | Mun, Jeong-Hun | ko |
dc.contributor.author | Lim, Sung-Kyu | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2013-08-08T05:12:46Z | - |
dc.date.available | 2013-08-08T05:12:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-10 | - |
dc.identifier.citation | MICROELECTRONIC ENGINEERING, v.87, no.10, pp.2002 - 2007 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174435 | - |
dc.description.abstract | This study reports surface pre-treatment techniques for the formation of a high-quality graphene layer on a SiC surface. It is demonstrated that silicon passivation of SiC surface using a silane flow and subsequent sacrificial oxidation can significantly improve the surface condition of a graphene layer on SIC by ensuring much fewer carbon dumps and wrinkles, reducing the electrical resistance, and providing smoother surface roughness and a larger domain size. The effect of in situ cleaning by a SF(6) treatment before graphitization was also studied. It was found that in situ cleaning using SF(6) gas can be a simple and effective means of improving the quality of a graphene layer grown on SiC. The results of this study suggest that a surface treatment before graphitization is the key to synthesize high-quality epitaxial graphene layer. (C) 2009 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | Elsevier Science Bv | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | GRAPHITE | - |
dc.title | Effect of a Surface Pre-Treatment on Graphene Growth using a SiC Substrate | - |
dc.type | Article | - |
dc.identifier.wosid | 000280046900034 | - |
dc.identifier.scopusid | 2-s2.0-84859906318 | - |
dc.type.rims | ART | - |
dc.citation.volume | 87 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 2002 | - |
dc.citation.endingpage | 2007 | - |
dc.citation.publicationname | MICROELECTRONIC ENGINEERING | - |
dc.identifier.doi | 10.1016/j.mee.2009.12.072 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Lim, Sung-Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Surface passivation | - |
dc.subject.keywordAuthor | Silane treatment | - |
dc.subject.keywordAuthor | Sacrificial oxidation | - |
dc.subject.keywordAuthor | Sulfur hexafluoride (SF(6)) | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | GRAPHITE | - |
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