DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Jieun | ko |
dc.contributor.author | Ha, Jeongseok | ko |
dc.contributor.author | Moon, Jaekyun | ko |
dc.contributor.author | Ungerboeck, Gottfried | ko |
dc.date.accessioned | 2013-08-08T01:52:18Z | - |
dc.date.available | 2013-08-08T01:52:18Z | - |
dc.date.created | 2013-07-22 | - |
dc.date.created | 2013-07-22 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON COMMUNICATIONS, v.61, no.5, pp.1674 - 1683 | - |
dc.identifier.issn | 0090-6778 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174146 | - |
dc.description.abstract | Multilevel flash memories store more than one bit per storage cell and are further characterized by large word (page) sizes and very low target error rates. In this paper, a high-rate error control scheme is presented that uses inner trellis-coded modulation (TCM) for storing two bits per cell with five possible charge levels. The coded subset-label bits and the uncoded signal-label bits of TCM are independently protected by separate outer Reed-Solomon (RS) codes. The resulting scheme permits multistage decoding. Errors made by the TCM decoder in the subset-label bits occur in bursts and are corrected by the associated first RS decoder prior to determining signal-label bits and correcting errors in those bits by the associated second RS decoder. The multi-stage decoding avoids the significant spread of errors from subset-label bits into the generally larger number of signal-label bits which is typical for conventional serial RS-TCM concatenation when the inner TCM system operates at relatively low SNR. The error performance of the proposed scheme is evaluated at low error rates by a mixed simulation-analytic method. It is shown that the proposed scheme exhibits highly favorable performance vs. complexity tradeoffs compared to the other schemes. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRELLIS-CODED MODULATION | - |
dc.subject | ERROR-CORRECTION | - |
dc.subject | CHANNEL | - |
dc.title | RS-Enhanced TCM for Multilevel Flash Memories | - |
dc.type | Article | - |
dc.identifier.wosid | 000319752600005 | - |
dc.identifier.scopusid | 2-s2.0-84878714528 | - |
dc.type.rims | ART | - |
dc.citation.volume | 61 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 1674 | - |
dc.citation.endingpage | 1683 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON COMMUNICATIONS | - |
dc.identifier.doi | 10.1109/TCOMM.2013.022713.120333 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Ha, Jeongseok | - |
dc.contributor.localauthor | Moon, Jaekyun | - |
dc.contributor.nonIdAuthor | Oh, Jieun | - |
dc.contributor.nonIdAuthor | Ungerboeck, Gottfried | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Trellis-coded modulation | - |
dc.subject.keywordAuthor | Reed-Solomon codes | - |
dc.subject.keywordAuthor | multi-level coded-modulation | - |
dc.subject.keywordAuthor | flash memory | - |
dc.subject.keywordPlus | TRELLIS-CODED MODULATION | - |
dc.subject.keywordPlus | ERROR-CORRECTION | - |
dc.subject.keywordPlus | CHANNEL | - |
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