DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sun-Wook | ko |
dc.contributor.author | Byun, Dae-Seop | ko |
dc.contributor.author | Jung, Mijin | ko |
dc.contributor.author | Chopra, Saurabh | ko |
dc.contributor.author | Kim, Yihwan | ko |
dc.contributor.author | Kim, Jae-Hyun | ko |
dc.contributor.author | Han, Seung Min J. | ko |
dc.contributor.author | Ko, Dae-Hong | ko |
dc.contributor.author | Lee, Hoo-Jeong | ko |
dc.date.accessioned | 2013-08-08T01:50:19Z | - |
dc.date.available | 2013-08-08T01:50:19Z | - |
dc.date.created | 2013-07-24 | - |
dc.date.created | 2013-07-24 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.citation | APPLIED PHYSICS EXPRESS, v.6, no.6 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174116 | - |
dc.description.abstract | This study examined the dimensional effects on the channel strain in transistor structures with epitaxial Si1-xCx stressors embedded in the source/drain region using both nanobeam diffraction and finite element simulations. The sizes of the gate and source/drain exerted a strong influence on the channel strain but in opposite directions: While declining linearly with decreasing source/drain length, the channel strain increases at an escalating rate with decreasing gate length. For source/drain elevation, its effects on the channel strain were found to be quite limited to the top surface region; however, this elevation method could be more effective for short-channel transistors. (C) 2013 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.subject | SILICON-CARBON SOURCE/DRAIN | - |
dc.subject | TRANSISTOR | - |
dc.subject | STRESSORS | - |
dc.subject | DEVICES | - |
dc.subject | IMPACT | - |
dc.title | Channel Strain Measurement of Si1-xCx Structures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation | - |
dc.type | Article | - |
dc.identifier.wosid | 000320167300045 | - |
dc.identifier.scopusid | 2-s2.0-84880913848 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.issue | 6 | - |
dc.citation.publicationname | APPLIED PHYSICS EXPRESS | - |
dc.identifier.doi | 10.7567/APEX.6.066601 | - |
dc.contributor.localauthor | Han, Seung Min J. | - |
dc.contributor.nonIdAuthor | Kim, Sun-Wook | - |
dc.contributor.nonIdAuthor | Byun, Dae-Seop | - |
dc.contributor.nonIdAuthor | Jung, Mijin | - |
dc.contributor.nonIdAuthor | Chopra, Saurabh | - |
dc.contributor.nonIdAuthor | Kim, Yihwan | - |
dc.contributor.nonIdAuthor | Kim, Jae-Hyun | - |
dc.contributor.nonIdAuthor | Ko, Dae-Hong | - |
dc.contributor.nonIdAuthor | Lee, Hoo-Jeong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SILICON-CARBON SOURCE/DRAIN | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | STRESSORS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | IMPACT | - |
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