DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Ji-Sang | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-07-18T06:56:23Z | - |
dc.date.available | 2013-07-18T06:56:23Z | - |
dc.date.created | 2013-07-08 | - |
dc.date.created | 2013-07-08 | - |
dc.date.created | 2013-07-08 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.citation | JOURNAL OF PHYSICS-CONDENSED MATTER, v.25, no.24, pp.245801 - 245801 | - |
dc.identifier.issn | 0953-8984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/174006 | - |
dc.description.abstract | We perform first-principles density functional calculations to investigate the effect of Al and In on the formation energy and acceptor level of Mg in group-III nitride alloys. Our calculations reveal a tendency for the Mg dopants to prefer to occupy the lattice sites surrounded with Al atoms, whereas hole carriers are generated in In- or Ga-rich sites. The separation of the Mg dopants and hole carriers is energetically more favourable than a random distribution of dopants, being attributed to the local bonding effect of weak In and strong Al potentials in alloys. As a consequence, the Mg acceptor level, which represents the activation energy of Mg, tends to decrease with increasing numbers of Al next-nearest neighbours, whereas it increases as the number of In next-nearest neighbours increases. Based on the results, we suggest that the incorporation of higher Al and lower In compositions will improve the p-type doping efficiency in quaternary alloys, in comparison with GaN or AlGaN ternary alloys with similar band gaps. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Site preference of Mg acceptors and improvement of p-type doping efficiency in nitride alloys | - |
dc.type | Article | - |
dc.identifier.wosid | 000319673800012 | - |
dc.identifier.scopusid | 2-s2.0-84878527130 | - |
dc.type.rims | ART | - |
dc.citation.volume | 25 | - |
dc.citation.issue | 24 | - |
dc.citation.beginningpage | 245801 | - |
dc.citation.endingpage | 245801 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS-CONDENSED MATTER | - |
dc.identifier.doi | 10.1088/0953-8984/25/24/245801 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | LASER-DIODES | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | ACTIVATION | - |
dc.subject.keywordPlus | ENERGY | - |
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