DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zalazar, M. | ko |
dc.contributor.author | Gurman, P. | ko |
dc.contributor.author | Park, J. | ko |
dc.contributor.author | Kim, D. | ko |
dc.contributor.author | Hong, Daniel Seungbum | ko |
dc.contributor.author | Stan, L. | ko |
dc.contributor.author | Divan, R. | ko |
dc.contributor.author | Czaplewski, D. | ko |
dc.contributor.author | Auciello, O. | ko |
dc.date.accessioned | 2013-06-07T07:59:02Z | - |
dc.date.available | 2013-06-07T07:59:02Z | - |
dc.date.created | 2013-05-07 | - |
dc.date.created | 2013-05-07 | - |
dc.date.created | 2013-05-07 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.102, no.10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/173803 | - |
dc.description.abstract | The physics for integration of piezoelectric aluminum nitride (AlN) films with underlying insulating ultrananocrystalline diamond (UNCD), and electrically conductive grain boundary nitrogen-incorporated UNCD (N-UNCD) and boron-doped UNCD (B-UNCD) layers, as membranes for microelectromechanical system implantable drug delivery devices, has been investigated. AlN films deposited on platinum layers on as grown UNCD or N-UNCD layer (5-10 nm rms roughness) required thickness of similar to 400 nm to induce (002) AlN orientation with piezoelectric d(33) coefficient similar to 1.91 pm/V at similar to 10 V. Chemical mechanical polished B-UNCD films (0.2 nm rms roughness) substrates enabled (002) AlN film 200 nm thick, yielding d(33) = 5.3 pm/V. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792238] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices | - |
dc.type | Article | - |
dc.identifier.wosid | 000316501200093 | - |
dc.identifier.scopusid | 2-s2.0-84875128996 | - |
dc.type.rims | ART | - |
dc.citation.volume | 102 | - |
dc.citation.issue | 10 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4792238 | - |
dc.contributor.localauthor | Hong, Daniel Seungbum | - |
dc.contributor.nonIdAuthor | Zalazar, M. | - |
dc.contributor.nonIdAuthor | Gurman, P. | - |
dc.contributor.nonIdAuthor | Park, J. | - |
dc.contributor.nonIdAuthor | Kim, D. | - |
dc.contributor.nonIdAuthor | Stan, L. | - |
dc.contributor.nonIdAuthor | Divan, R. | - |
dc.contributor.nonIdAuthor | Czaplewski, D. | - |
dc.contributor.nonIdAuthor | Auciello, O. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ALN THIN-FILMS | - |
dc.subject.keywordPlus | NANOCRYSTALLINE DIAMOND | - |
dc.subject.keywordPlus | SAW DEVICES | - |
dc.subject.keywordPlus | SCIENCE | - |
dc.subject.keywordPlus | STRESS | - |
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