Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices

Abstract

The physics for integration of piezoelectric aluminum nitride (AlN) films with underlying insulating ultrananocrystalline diamond (UNCD), and electrically conductive grain boundary nitrogen-incorporated UNCD (N-UNCD) and boron-doped UNCD (B-UNCD) layers, as membranes for microelectromechanical system implantable drug delivery devices, has been investigated. AlN films deposited on platinum layers on as grown UNCD or N-UNCD layer (5-10 nm rms roughness) required thickness of similar to 400 nm to induce (002) AlN orientation with piezoelectric d(33) coefficient similar to 1.91 pm/V at similar to 10 V. Chemical mechanical polished B-UNCD films (0.2 nm rms roughness) substrates enabled (002) AlN film 200 nm thick, yielding d(33) = 5.3 pm/V. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792238]