Integration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices

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dc.contributor.authorZalazar, M.ko
dc.contributor.authorGurman, P.ko
dc.contributor.authorPark, J.ko
dc.contributor.authorKim, D.ko
dc.contributor.authorHong, Daniel Seungbumko
dc.contributor.authorStan, L.ko
dc.contributor.authorDivan, R.ko
dc.contributor.authorCzaplewski, D.ko
dc.contributor.authorAuciello, O.ko
dc.date.accessioned2013-06-07T07:59:02Z-
dc.date.available2013-06-07T07:59:02Z-
dc.date.created2013-05-07-
dc.date.created2013-05-07-
dc.date.created2013-05-07-
dc.date.issued2013-03-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.102, no.10-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/173803-
dc.description.abstractThe physics for integration of piezoelectric aluminum nitride (AlN) films with underlying insulating ultrananocrystalline diamond (UNCD), and electrically conductive grain boundary nitrogen-incorporated UNCD (N-UNCD) and boron-doped UNCD (B-UNCD) layers, as membranes for microelectromechanical system implantable drug delivery devices, has been investigated. AlN films deposited on platinum layers on as grown UNCD or N-UNCD layer (5-10 nm rms roughness) required thickness of similar to 400 nm to induce (002) AlN orientation with piezoelectric d(33) coefficient similar to 1.91 pm/V at similar to 10 V. Chemical mechanical polished B-UNCD films (0.2 nm rms roughness) substrates enabled (002) AlN film 200 nm thick, yielding d(33) = 5.3 pm/V. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792238]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleIntegration of piezoelectric aluminum nitride and ultrananocrystalline diamond films for implantable biomedical microelectromechanical devices-
dc.typeArticle-
dc.identifier.wosid000316501200093-
dc.identifier.scopusid2-s2.0-84875128996-
dc.type.rimsART-
dc.citation.volume102-
dc.citation.issue10-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.4792238-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.nonIdAuthorZalazar, M.-
dc.contributor.nonIdAuthorGurman, P.-
dc.contributor.nonIdAuthorPark, J.-
dc.contributor.nonIdAuthorKim, D.-
dc.contributor.nonIdAuthorStan, L.-
dc.contributor.nonIdAuthorDivan, R.-
dc.contributor.nonIdAuthorCzaplewski, D.-
dc.contributor.nonIdAuthorAuciello, O.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusALN THIN-FILMS-
dc.subject.keywordPlusNANOCRYSTALLINE DIAMOND-
dc.subject.keywordPlusSAW DEVICES-
dc.subject.keywordPlusSCIENCE-
dc.subject.keywordPlusSTRESS-
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