DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, HY | ko |
dc.contributor.author | Kang, BH | ko |
dc.contributor.author | Park, CW | ko |
dc.contributor.author | Pi, UH | ko |
dc.contributor.author | Lee, CJ | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2013-06-07T06:42:40Z | - |
dc.date.available | 2013-06-07T06:42:40Z | - |
dc.date.created | 2013-05-13 | - |
dc.date.created | 2013-05-13 | - |
dc.date.created | 2013-05-13 | - |
dc.date.issued | 2005-07 | - |
dc.identifier.citation | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.81, no.2, pp.245 - 247 | - |
dc.identifier.issn | 0947-8396 | - |
dc.identifier.uri | http://hdl.handle.net/10203/173745 | - |
dc.description.abstract | We fabricated a free-standing structure of a GaN nanowire by selectively etching Si3N4, previously grown on a SiO2 substrate, for application to three-dimensional integrated circuits such as nanorelays and actuators. In the nanowire-deposition process we adopted electrophoresis and reactive ion etching techniques to achieve a well-aligned and free-standing nanowire. The electrical transport measurements were performed from room temperature down to liquid-nitrogen temperature. The current-voltage (I-V) characteristics showed a rectifying behavior in the whole temperature range. We analyze this property as a Schottky barrier formation between the nanowire and electrodes. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.title | The fabrication technique and electrical properties of a free-standing GaN nanowire | - |
dc.type | Article | - |
dc.identifier.wosid | 000229239800003 | - |
dc.identifier.scopusid | 2-s2.0-18844399616 | - |
dc.type.rims | ART | - |
dc.citation.volume | 81 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 245 | - |
dc.citation.endingpage | 247 | - |
dc.citation.publicationname | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | - |
dc.identifier.doi | 10.1007/s00339-005-3276-3 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Yu, HY | - |
dc.contributor.nonIdAuthor | Kang, BH | - |
dc.contributor.nonIdAuthor | Park, CW | - |
dc.contributor.nonIdAuthor | Pi, UH | - |
dc.contributor.nonIdAuthor | Lee, CJ | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | WALLED CARBON NANOTUBES | - |
dc.subject.keywordPlus | INDIUM-PHOSPHIDE NANOWIRES | - |
dc.subject.keywordPlus | BUILDING-BLOCKS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | DEVICES | - |
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