보상 도핑된 ZnO 박막을 이용한 FBAR 소자의 공진 특성 연구A Study on Resonance Characteristics of FBAR Devices Using Compensatory-doped ZnO Thin Films
- Publisher
- 한국ITS학회
- Issue Date
- 2012-11-03
- Language
- KOR
- Citation
한국ITS학회 2012년 추계학술대회, pp.33 - 37
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.