MOCVD growth and characterization of InGaN/GaN multiple quantum wells on chemically wet-etched porous GaN layers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Yong-Hoon | - |
| dc.date.accessioned | 2013-03-29T16:03:25Z | - |
| dc.date.available | 2013-03-29T16:03:25Z | - |
| dc.date.created | 2012-08-13 | - |
| dc.date.issued | 2010-02-03 | - |
| dc.identifier.citation | The 4th Internatinal conference on LED and solid state lighting (LED2010), v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/171970 | - |
| dc.language | ENG | - |
| dc.publisher | The 4th Internatinal conference on LED and solid state lighting (LED2010) | - |
| dc.title | MOCVD growth and characterization of InGaN/GaN multiple quantum wells on chemically wet-etched porous GaN layers | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 4th Internatinal conference on LED and solid state lighting (LED2010) | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Cho, Yong-Hoon | - |
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