A versatile patterning method for 3-dimensional complex pattern with 10nm scale over large area by secondary sputtering phenomenon

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dc.contributor.author전환진-
dc.contributor.author김종선-
dc.contributor.author김경환-
dc.contributor.author백연경-
dc.contributor.author김대우-
dc.contributor.author최종길-
dc.contributor.author이지선-
dc.contributor.author정희태-
dc.date.accessioned2013-03-29T13:49:48Z-
dc.date.available2013-03-29T13:49:48Z-
dc.date.created2012-07-30-
dc.date.issued2011-04-
dc.identifier.citation2011 춘계학술대회 , v.36, no.1, pp. --
dc.identifier.urihttp://hdl.handle.net/10203/171158-
dc.description.abstractThe development of large-area nano-patterning with high resolution, high aspect ratio and simple process scheme/cost is a challenging work for realizing their potential applications in opto-electronics and nano-biotechnology such as nanoelectronics, optics, optical sensing, light-emitting devices and bio-sensing devices. Unlike previous nano-fabrication techniques reported thus far, our method has several powerful advantages such as high resolution(~10nm) and high aspect ratio(~15), easy fabrication process over large area, wide range of materials available, 3-dimensional complex nano-structure and easy controlling of pattern feature. Thus, our novel patterning technology will be able to introduce new concepts for fabricating high performance of future nanoscale devices.-
dc.languageKOR-
dc.publisher한국고분자학회-
dc.titleA versatile patterning method for 3-dimensional complex pattern with 10nm scale over large area by secondary sputtering phenomenon-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.volume36-
dc.citation.issue1-
dc.citation.publicationname2011 춘계학술대회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthor정희태-
dc.contributor.nonIdAuthor전환진-
dc.contributor.nonIdAuthor김종선-
dc.contributor.nonIdAuthor김경환-
dc.contributor.nonIdAuthor백연경-
dc.contributor.nonIdAuthor김대우-
dc.contributor.nonIdAuthor최종길-
dc.contributor.nonIdAuthor이지선-
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CBE-Conference Papers(학술회의논문)
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