Statistical Analysis of Flash Memory Read Data

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dc.contributor.authorMoon, Jaekyunko
dc.contributor.authorNo, Jaehyeongko
dc.contributor.authorLee, Sangchulko
dc.contributor.authorKim, Sangsikko
dc.contributor.authorYang, Joongseopko
dc.date.accessioned2013-03-29T12:10:35Z-
dc.date.available2013-03-29T12:10:35Z-
dc.date.created2012-07-10-
dc.date.created2012-07-10-
dc.date.created2012-07-10-
dc.date.issued2011-12-05-
dc.identifier.citationIEEE Global Telecommunications Conference, 2011-
dc.identifier.issn1930-529X-
dc.identifier.urihttp://hdl.handle.net/10203/170601-
dc.description.abstractThis paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the victim cell. Using the proposed analysis technique, the contribution of a specified set of neighboring cells towards the random read variation of the victim cell can be also quantified accurately.-
dc.languageEnglish-
dc.publisherIEEE Global Telecommunications Conference, 2011-
dc.titleStatistical Analysis of Flash Memory Read Data-
dc.typeConference-
dc.identifier.wosid000300509005123-
dc.identifier.scopusid2-s2.0-84863128924-
dc.type.rimsCONF-
dc.citation.publicationnameIEEE Global Telecommunications Conference, 2011-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationHouston, TX, USA-
dc.contributor.localauthorMoon, Jaekyun-
dc.contributor.nonIdAuthorNo, Jaehyeong-
dc.contributor.nonIdAuthorLee, Sangchul-
dc.contributor.nonIdAuthorKim, Sangsik-
dc.contributor.nonIdAuthorYang, Joongseop-
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EE-Conference Papers(학술회의논문)
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