DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, J | - |
dc.contributor.author | Na, S | - |
dc.contributor.author | Lee, HJ | - |
dc.contributor.author | Lee, Seok-Hee | - |
dc.contributor.author | Kim, H | - |
dc.date.accessioned | 2013-03-29T12:00:26Z | - |
dc.date.available | 2013-03-29T12:00:26Z | - |
dc.date.created | 2012-07-08 | - |
dc.date.issued | 2012-08-28 | - |
dc.identifier.citation | International Union of Materials Research Society-International Conference in Asia, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/170544 | - |
dc.language | ENG | - |
dc.publisher | International Union of Materials Research Society | - |
dc.title | Phase Transition of Yb-Doped Er-Silicide for NMOS Application | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | International Union of Materials Research Society-International Conference in Asia | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Lee, Seok-Hee | - |
dc.contributor.nonIdAuthor | Choi, J | - |
dc.contributor.nonIdAuthor | Na, S | - |
dc.contributor.nonIdAuthor | Lee, HJ | - |
dc.contributor.nonIdAuthor | Kim, H | - |
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