Electrical characterization of Trough Silicon Via (TSV) depending on structural and material parameters based on 3D full wave simulation
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Pak, J.S. | ko |
| dc.contributor.author | Ryu, C. | ko |
| dc.contributor.author | Kim, Joungho | ko |
| dc.date.accessioned | 2010-03-05T05:54:10Z | - |
| dc.date.available | 2010-03-05T05:54:10Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2007-11-19 | - |
| dc.identifier.citation | International Conference on Electronic Materials and Packaging, EMAP 2007 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/16975 | - |
| dc.description.sponsorship | This work was supported by the IT R&D program of MIC/IITA. [2005-S-118-02, Development of High-Performance and Smallest SiP Technology] | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | Electrical characterization of Trough Silicon Via (TSV) depending on structural and material parameters based on 3D full wave simulation | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000259300000058 | - |
| dc.identifier.scopusid | 2-s2.0-51249113887 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Conference on Electronic Materials and Packaging, EMAP 2007 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Daejeon | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Kim, Joungho | - |
| dc.contributor.nonIdAuthor | Pak, J.S. | - |
| dc.contributor.nonIdAuthor | Ryu, C. | - |
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