DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Eunju | ko |
dc.contributor.author | Zhang, Ruirui | ko |
dc.contributor.author | Yoon, Giwan | ko |
dc.date.accessioned | 2013-03-29T08:24:08Z | - |
dc.date.available | 2013-03-29T08:24:08Z | - |
dc.date.created | 2012-06-25 | - |
dc.date.created | 2012-06-25 | - |
dc.date.issued | 2011-08-24 | - |
dc.identifier.citation | IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals , pp.1 - 2 | - |
dc.identifier.uri | http://hdl.handle.net/10203/169374 | - |
dc.description.abstract | The improvements of the resonance characteristics of the film bulk acoustic wave resonator (FBAR) devices fabricated employing nitrogen [N]-incorporated ZnO films are presented. The N-incorporated ZnO films were sputter-deposited in a mixture of N2O and Ar gases as the reactive and sputtering gases, respectively. Mainly due to the thermal annealing treatments of the N-incorporated ZnO films, the resonance characteristics could be significantly improved. The excellent return loss (S11) of -63 dB was observed at ~0.6 GHz, which is better than ever reported in this device technology regime. | - |
dc.language | English | - |
dc.publisher | IEEE MTT-S | - |
dc.title | Development of FBAR Devices Based on Thermal Annealing Treatments of Nitrogen [N]-Incorporated ZnO Films | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-80054015042 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 1 | - |
dc.citation.endingpage | 2 | - |
dc.citation.publicationname | IEEE MTT-S International Microwave Workshop Series on Intelligent Radio for Future Personal Terminals | - |
dc.identifier.conferencecountry | KO | - |
dc.identifier.conferencelocation | Daejeon | - |
dc.identifier.doi | 10.1109/IMWS2.2011.6027208 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Yoon, Giwan | - |
dc.contributor.nonIdAuthor | Zhang, Ruirui | - |
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