DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Y. J. | - |
dc.contributor.author | Hwang, J.-H. | - |
dc.contributor.author | Noh, H.-K. | - |
dc.contributor.author | Bang, J. | - |
dc.contributor.author | Ry, B. | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.date.accessioned | 2013-03-29T07:11:21Z | - |
dc.date.available | 2013-03-29T07:11:21Z | - |
dc.date.created | 2012-04-06 | - |
dc.date.issued | 2011-02 | - |
dc.identifier.citation | The 18th Korean Conference on Semiconductors, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/168632 | - |
dc.language | ENG | - |
dc.publisher | KCS | - |
dc.title | Stability of boron dopants at the Si/SiO2 interface | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | The 18th Korean Conference on Semiconductors | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Oh, Y. J. | - |
dc.contributor.nonIdAuthor | Hwang, J.-H. | - |
dc.contributor.nonIdAuthor | Noh, H.-K. | - |
dc.contributor.nonIdAuthor | Bang, J. | - |
dc.contributor.nonIdAuthor | Ry, B. | - |
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