Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Noh, H.-K. | - |
| dc.contributor.author | Ryu, B. | - |
| dc.contributor.author | Choi, E.-A. | - |
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.date.accessioned | 2013-03-29T07:00:08Z | - |
| dc.date.available | 2013-03-29T07:00:08Z | - |
| dc.date.created | 2012-04-05 | - |
| dc.date.issued | 2011-04 | - |
| dc.identifier.citation | 2011 Materials Research Society (MRS) Spring Meeting, v., no., pp.- | - |
| dc.identifier.uri | http://hdl.handle.net/10203/168587 | - |
| dc.language | English | - |
| dc.publisher | Materials Research Society | - |
| dc.title | Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors | - |
| dc.type | Conference | - |
| dc.description.department | 물리학과 | - |
| dc.type.rims | CONF | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Noh, H.-K. | - |
| dc.contributor.nonIdAuthor | Ryu, B. | - |
| dc.contributor.nonIdAuthor | Choi, E.-A. | - |
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