Stability of boron dopants near the interface between Si and amorphous SiO2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Oh, Y. J. | - |
| dc.contributor.author | Noh, H.-K. | - |
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.date.accessioned | 2013-03-29T06:58:49Z | - |
| dc.date.available | 2013-03-29T06:58:49Z | - |
| dc.date.issued | 2011-03 | - |
| dc.identifier.citation | 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation v. no. pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/168571 | - |
| dc.language | English | - |
| dc.publisher | ACCMS | - |
| dc.title | Stability of boron dopants near the interface between Si and amorphous SiO2 | - |
| dc.type | Conference | - |
| dc.description.department | 물리학과 | - |
| dc.type.rims | CONF | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Oh, Y. J. | - |
| dc.contributor.nonIdAuthor | Noh, H.-K. | - |
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